An MOS Transistor Model for Analog Circuit Design
نویسندگان
چکیده
This paper presents a physically based model for the metal–oxide–semiconductor (MOS) transistor suitable for analysis and design of analog integrated circuits. Static and dynamic characteristics of the MOS field-effect transistor are accurately described by single-piece functions of two saturation currents in all regions of operation. Simple expressions for the transconductance-to-current ratio, the drain-to-source saturation voltage, and the cutoff frequency in terms of the inversion level are given. The design of a common-source amplifier illustrates the application of the proposed model.
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تاریخ انتشار 1999